Investigation of transient substrate currents in lateral power devices on silicon-on-insulator

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 8 SUPPL. B, 1996, Pages

  Sumida, Hitoshi ^a   Hirabayashi, Atsuo ^a   Tagami, Saburou ^a  

^a FUJI ELECTRIC CO   (Japan)

Author keywords

IGBT; MOSFET; SOI; Substrate current; Turn off; Turn on

Indexed keywords

EID: 0007719128     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1038     Document Type: Article

References (4)

1. A. Nakagawa, N. Yasuhara and Y. Baba: Proc. 2th ISPSD (IEEE, Tokyo, 1990) p. 97.
2. H. Yamaguchi, H. Himi, S. Fujino and T. Hattori: IEICE Trans. Electron. E75-C (1992) 1447.
3. N. Iwamuro and S. Tagami: IEEE Trans. Comput. 12 (1993) 909.
4. H. Sumida and A. Hirabayashi: IEICE Trans. Electron. E79-C (1996) 593.