Multi-channel SOI lateral IGBTs with large SOA

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1997, Pages 33-36

  Funaki, Hideyuki ^a   Matsudai, Tomoko ^a   Nakagawa, Akio ^a   Yasuhara, Norio ^a   Yamaguchi, Yoshihiro ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MODELS; SHORT CIRCUIT CURRENTS; SILICON ON INSULATOR TECHNOLOGY;

ELECTRON INJECTION; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); SAFE OPERATION AREA (SOA);

BIPOLAR TRANSISTORS;

EID: 0030691416     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)