Modelling of the hole-initiated impact ionization current in the framework of hydrodynamic equations

Solid-State Electronics

Volumn 46, Issue 2, 2002, Pages 223-234

  Lorenzini, Martino ^a   Van Houdt, Jan ^a  

^a IMEC   (Belgium)

Author keywords

Generation rate; Hydrodynamic equations; Impact ionization; pMOS transistor; Substrate current

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; HYDRODYNAMICS; IMPACT IONIZATION; SEMICONDUCTING SILICON; SUBSTRATES;

HYDRODYNAMIC EQUATIONS;

SEMICONDUCTOR DEVICES;

EID: 0036466922     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00313-6     Document Type: Article

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