A study of the deactivation of high concentration, laser annealed dopant profiles in silicon

Materials Research Society Symposium - Proceedings

Volumn 669, Issue , 2001, Pages

  Takamura, Yayoi ^a   Jain, Sameer ^a   Griffin, Peter B ^a   Plummer, James D ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; LASER BEAM EFFECTS; RAPID THERMAL ANNEALING; REACTION KINETICS; SEMICONDUCTOR DOPING; SUPERSATURATION;

CHEMICAL DEACTIVATION; DOPANTS;

SEMICONDUCTING SILICON;

EID: 0035556698     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-669-j7.3     Document Type: Conference Paper

References (16)