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Volumn , Issue , 2000, Pages 646-649
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Boxer Cross measurements of laser annealed shallow junctions
a
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Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER DENSITY;
CARRIER ILLUMINATION;
CROSS-MEASUREMENTS;
DEPTH VARIATION;
DOPANT DISTRIBUTION;
ENERGY DENSITY;
INDEX OF REFRACTION;
LASER THERMAL ANNEALING;
PHYSICAL PROCESS;
PRE-AMORPHIZATION IMPLANT;
RE CRYSTALLIZATIONS;
SHALLOW JUNCTION;
SILICON SAMPLES;
TEM;
ULTRA SHALLOW JUNCTION;
ANNEALING;
ARSENIC;
BORON;
BORON COMPOUNDS;
CRYSTALLIZATION;
DISTRIBUTION FUNCTIONS;
ELECTRIC RESISTANCE;
GERMANIUM;
LASER HEATING;
PHOSPHORUS;
REFRACTIVE INDEX;
SILICON WAFERS;
THERMOANALYSIS;
ION IMPLANTATION;
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EID: 0011982191
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/.2000.924236 Document Type: Conference Paper |
Times cited : (4)
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References (5)
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