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Volumn , Issue , 2000, Pages 646-649

Boxer Cross measurements of laser annealed shallow junctions

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DENSITY; CARRIER ILLUMINATION; CROSS-MEASUREMENTS; DEPTH VARIATION; DOPANT DISTRIBUTION; ENERGY DENSITY; INDEX OF REFRACTION; LASER THERMAL ANNEALING; PHYSICAL PROCESS; PRE-AMORPHIZATION IMPLANT; RE CRYSTALLIZATIONS; SHALLOW JUNCTION; SILICON SAMPLES; TEM; ULTRA SHALLOW JUNCTION;

EID: 0011982191     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2000.924236     Document Type: Conference Paper
Times cited : (4)

References (5)
  • 4
    • 0041714401 scopus 로고
    • High speed crystal growth and solidification using laser heating
    • J. Poate, "High Speed Crystal Growth and Solidification Using Laser Heating," Journal of Crystal Growth, vol. 79, P549, 1986.
    • (1986) Journal of Crystal Growth , vol.79 , pp. 549
    • Poate, J.1
  • 5
    • 0002240674 scopus 로고    scopus 로고
    • Carrier Illumination characterization of ultrashallow implants
    • Diebold Ed., New York: Marcel Dekker, in press
    • P. Borden, "Carrier Illumination characterization of ultrashallow implants," in Handbook of Silicon Semiconductor Metrology, A. Diebold Ed., New York: Marcel Dekker, 2001, in press.
    • (2001) Handbook of Silicon Semiconductor Metrology, A
    • Borden, P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.