Characteristics of polycrystalline silicon thin films prepared by pulsed ion-beam evaporation

Materials Research Society Symposium - Proceedings

Volumn 697, Issue , 2002, Pages 177-182

  Yang, Sung Chae ^a   Fazlat, Ali ^a   Suematsu, Hisayuki ^a   Jiang, Weihua ^a   Yatsui, Kiyoshi ^a  

^a NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABLATION; DIFFRACTION; ELECTRIC POTENTIAL; EVAPORATION; ION BEAM ASSISTED DEPOSITION; PLASMAS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SUBSTRATES;

PULSED ION BEAM EVAPORATION TECHNIQUE;

THIN FILMS;

EID: 0036452711     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. E. Srinivasan and G.N. Parsons, J. Appl. Phys., 81, 2847 (1997).
2. C. Fukai, Y. Moriya, T. Nakamura and H. Shirai, Jpn. J. Appl. Phys., 38, L554 (1999).
3. K. Goshima et al., Jpn. J. Appl. Phys., 38, 3655 (1999).
4. R. Nozawa, H. Takeda, M. Ito, M. Hori and T. Goto, J. Appl. Phys., 81, 8035 (1997).
5. S. Hasegawa, M. Sakata, T. Inokuma and Y. Kurata, J. Appl. Phys., 85, 3844 (1999).
6. H. Shirai et al., Jpn. J. Appl. Phys., 38, 6629 (1999).
7. Y. Shimotori et al., J. Appl. Phys. 63, 968 (1988).
8. K. Yatsui et al., Phys. of Plasmas, 1, 1730 (1994).
9. K. Yatsui et al., Jpn. J. Appl. Phys., 36, 4928 (1997).
10. S.-C. Yang, et al., Proc. IEEE International Conference on Pulsed Power and Plasma Sciences, Las Vegas, USA (2001) P4-J16.