Structural change of polycrystalline silicon films with different deposition temperature

Journal of Applied Physics

Volumn 85, Issue 7, 1999, Pages 3844-3849

  Hasegawa, S ^a   Sakata, M ^a   Inokuma, T ^a   Kurata, Y ^a  

^a KANAZAWA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CRYSTAL ORIENTATION; CRYSTALLIZATION; GRAIN BOUNDARIES; MORPHOLOGY; NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES; TEXTURES;

DEPOSITION TEMPERATURE;

SEMICONDUCTING FILMS;

EID: 0032607140     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369755     Document Type: Article

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