Effect of arsenic on extended defect evolution in silicon

Materials Research Society Symposium - Proceedings

Volumn 669, Issue , 2001, Pages

  Brindos, R ^a   Jones, K S ^a   Law, M E ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; ARSENIC; BINDING ENERGY; COMPUTER SIMULATION; CRYSTAL DEFECTS; DISSOLUTION; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; NUCLEATION;

EXTENDED DEFECT EVOLUTION;

SEMICONDUCTING SILICON;

EID: 0035556755     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-669-j5.2     Document Type: Conference Paper

References (10)

1. Si front-end processing physics and technology of dopant-defect interactions