40 GHz transimpedance amplifier with differential outputs using InP/InGaAs heterojunction bipolar transistors

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2002, Pages 63-66

  Wu, Charles Q ^a   Sovero, Emilio A ^a   Massey, Bruce ^a  

^a Vitesse Semiconductor Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); BANDWIDTH; DEMULTIPLEXING; OPTICAL FIBERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

TRANSIMPEDANCE AMPLIFIERS (TIA);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036440085     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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3. Mullrich, J.; Thurner, H.; Mullner, E.; Jensen, J.F.; Stanchina, W.E.; Kardos, M.; Rein, H.-M. "High-gain transimpedance amplifier in InP-based HBT technology for the receiver in 40-Gb/s optical-fiber TDM links" IEEE Journal of Solid-State Circuits, vol.35, (no.9), (GaAs IC Symposium. 21st Annual. Technical Digest 1999, Monterey, CA, USA, 17-20 Oct. 1999.) IEEE, Sept. 2000. p.1260-5.
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6. Ishihara, N.; Nakajima, O.; Ichino, H.; Yamauchi, Y. "9 GHz bandwidth, 8-20 dB controllable-gain monolithic amplifier using AlGaAs/GaAs HBT technology" Electronics Letters, vol.25, (no.19), 14 Sept. 1989. p.1317-18.
7. Pohlmann, W. "A silicon-bipolar amplifier for 10 Gbit/s with 45 dB gain" IEEE Journal of Solid-State Circuits, vol.29, (no.5), May 1994. p.551-6.
8. Rein, H.-M.; Moller, M. "Design considerations for very-high-speed Si-bipolar IC's operating up to 50 Gb/s" IEEE Journal of Solid-State Circuits, vol.31, (no.8), IEEE, Aug. 1996. p.1076-90.
9. Kim, Helen H.; Burrus, Charles A. Jr; Bauman, Jon "A Si BiCMOS Transimpedance Amplifier for 10-Gb/s SONET Receiver", IEEE Journal of Solid-State Circuits, vol.36, (no.5), IEEE, May. 2001. p.769-776.