InP/GaAsSb/InP double heterojunction bipolar transistors (invited)

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2002, Pages 265-268

  Bolognesi, Colombo R ^a   Dvorak, Martin W ^a,b   Watkins, Simonw P ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

^b AGILENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; DIGITAL CIRCUITS; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; FABRICATION; OSCILLATIONS; SEMICONDUCTING ANTIMONY COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR JUNCTIONS;

CURRENT GAIN; OSCILLATION FREQUENCIES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036438301     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. M.W. Dvorak, C.R. Bolognesi, O.J. Pitts and S.P. Watkins, "300 GHz InP/GaAsSb/InP double HBTs with high current capability and BVCEO > 6 V," IEEE Electron Dev. Lett., vol. 22, pp. 361-363, 2001.
2. C.R. Bolognesi, N. Matine, M.W. Dvorak, X.G. Xu, J. Hu, et al., "Non-blocking collector InP/GaAsSb/InP double heterojunction bipolar transistors with a staggered lineup base-collector junction," IEEE Electron Dev. Lett., vol. 20, pp. 155-157, 1999.
3. N. Moll, personal communication, 2002.
4. S.P. Watkins, O.J. Pitts, C. Dale, X.G. Xu, M.W. Dvorak, et al., "Heavily carbon-doped GaAsSb grown for HBT applications," J. Cryst. Growth, vol. 221, pp. 59-65, 2000.
5. J. Hu, X.G. Xu, J.A.H. Stotz, S.P. Watkins, A.E. Curzon, et al., "Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy," Appl. Phys. Lett., vol. 73, pp. 2799-2801, 1998.
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7. S. Tiwari, "A new effect at high currents in heterostructure bipolar transistors," IEEE Electron Dev. Lett., vol. 9, pp. 142-144, 1988.
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9. C.R. Bolognesi, M.W. Dvorak, O. Pitts, S.P. Watkins and T.W. MacElwee, "Investigation of high-current effects in staggered lineup InP/GaAsSb/InP heterostructure bipolar transistors: temperature characterization and comparison to conventional type-I HBTs and DHBTs,' presented at International Electron Device Meeting, Washington DC, 2001.
10. K. Kurishima, H. Nakajima, T. Kobayashi, Y. Matsuoka and T. Ishibashi, "Fabrication and characterization of high-performance InP/GaInAs double-heterojunction bipolar transistors," IEEE Trans. Electron Devices, vol. 41, pp. 1319-1326, 1994.
11. Y. Matsuoka and E. Sano, "InP/InGaAs double-heterostructure bipolar transistors for high-speed ICs and OEICs," Solid State Electronics, vol. 38, pp. 1703-1709, 1995.