Pulsed laser deposition of Y2O3 on Si: Characteristics of the interfacial layer

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4762, Issue , 2002, Pages 93-98

  Craciun, V ^a   Bassim, N ^a   Howard, J M ^a   Singh, R K ^a  

^a University of Florida   (United States)

Author keywords

Laser ablation; Medium k dielectrics; Thin films; Ultraviolet light; Yttria

Indexed keywords

DEGRADATION; INTERFACES (MATERIALS); PRESSURE EFFECTS; SILICON; THERMAL EFFECTS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY; YTTRIUM COMPOUNDS;

INTERFACIAL LAYER; X RAY REFLECTOMETRY; YTTRIUM SILICATE;

PULSED LASER DEPOSITION;

EID: 0036438214     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.478619     Document Type: Conference Paper

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