Influence of the crystalline quality of epitaxial layers on inversion channel mobility in 4H-SiC MOSFETs

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1053-1056

  Kojima, K ^a,b,c   Ohno, T ^a,c   Suzuki, S ^a,c   Senzaki, J ^a,b   Harada, S ^a,b,c   Fukuda, K ^a,b   Kushibe, M ^a,b   Masahara, K ^a,c   Ishida, Y ^a,b   Takahashi, T ^a,b   Suzuki, T ^a,c   Tanaka, T ^a,c   Yoshida, S ^a,b   Arai, K ^a,b  

^a Ultra Low Loss Power Device Technology Research Body UPR   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c R&D Association for Future Electron Devices   (Japan)

Author keywords

4H SiC; Crystal quality; Epitaxial layers; Inversion channel mobility; MOSFETs

Indexed keywords

CRYSTALLINE MATERIALS; ENERGY GAP; EPITAXIAL GROWTH; EPITAXIAL LAYERS; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON CARBIDE; SURFACE ROUGHNESS; WIDE BAND GAP SEMICONDUCTORS; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; ELECTRON MOBILITY; HALL EFFECT; ION IMPLANTATION; PHOTOLUMINESCENCE; X RAY DIFFRACTION ANALYSIS;

4H-SIC; CRYSTAL QUALITIES; CRYSTALLINE QUALITY; DOPING CONCENTRATION; INVERSION CHANNELS; MOSFETS; PHOTOLUMINESCENCE INTENSITIES; X RAY ROCKING CURVE; EPITAXIAL LAYERS;

MOSFET DEVICES;

EID: 0036435379     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1053     Document Type: Conference Paper

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