Static and dynamic behaviour of SiC JFET/Si MOSFET cascade configuration for high-performance power switches

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1239-1242

  Mihaila, A ^a   Udrea, F ^a   Azar, R ^a   Brezeanu, G ^b   Amaratunga, G ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY POLITEHNICA OF BUCHAREST   (Romania)

Author keywords

Hybrid SiC Si cascade configuration; SiC JFETs; SiC trench MOSFETs

Indexed keywords

ANALOG CIRCUITS; JUNCTION GATE FIELD EFFECT TRANSISTORS; MIXED SIGNAL INTEGRATED CIRCUITS; POWER MOSFET; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRIC SWITCHES; SILICON CARBIDE;

CASCADE CONFIGURATION; CASCODE CONFIGURATION; CHANNEL MOBILITY; MIXED-MODE CIRCUITS; ON-STATE RESISTANCE; OXIDE BREAKDOWN; STATIC AND DYNAMIC BEHAVIOURS; TRENCH MOSFETS;

SILICON CARBIDE; MOSFET DEVICES;

EID: 0036435129     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1239     Document Type: Conference Paper

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