Electrical noise used as a tool for assessing the defectivity of SiC Schottky diodes

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 402-405

  Royet, A S ^a   Ouisse, T ^a   Billon, T ^b   Jaussaud, C ^b   Cabon, B ^a  

^a CNRS   (France)

^b CEA LETI   (France)

Author keywords

Electrical noise; Random telegraph signal; Schottky diodes; Silicon carbide

Indexed keywords

RANDOM TELEGRAPH SIGNAL (RTS);

ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON TRAPS; NONDESTRUCTIVE EXAMINATION; SEMICONDUCTING SILICON COMPOUNDS; SIGNAL NOISE MEASUREMENT; SILICON CARBIDE;

SCHOTTKY BARRIER DIODES;

EID: 0032670312     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00542-X     Document Type: Article

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