Rumba: A rule-model OPC for low MEEF 130nm KrF lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4409, Issue 1, 2001, Pages 172-185

  Hsu, Stephen ^a   Shi, Xuelong ^a   Hsu, Michael ^a   Corcoran, Noel ^a   Chen, J Fung ^a   Desai, Sunil ^b   Sherrill, Michael J ^b   Tseng, Y C ^c   Chang, H A ^c   Kao, J F ^c   Tseng, Alex ^c   Liu, W J ^c   Chen, Anseime ^c   Lin, Athrur ^d   Kujten, Jan Pieter ^e   Jacobs, Eric ^e   Verhappen, Arjan ^e  

^a ASML US Inc   (United States)

^b KLA TENCOR CORPORATION   (United States)

^c UNITED MICROELECTRONICS CORPORATION   (Taiwan)

^d Grand Technology Inc   (Taiwan)

^e ASML   (Netherlands)

Author keywords

ArF; Attenuated PSM; KrF; MEEF; Model OPC; Overlapped process windows; SB OPC

Indexed keywords

ABERRATIONS; CALCULATIONS; COMPUTER SIMULATION; FOCUSING; LENSES; MATHEMATICAL MODELS; OPTIMIZATION; PHOTOLITHOGRAPHY;

MASK ERROR ENHANCEMENT FACTOR; OPTICAL PROXIMITY CORRECTION; OVERLAPPED PROCESS WINDOW;

MASKS;

EID: 17944376559     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.438410     Document Type: Article

References (6)

1. Forbidden pitches for 130nm lithography and below
2. Status of ArF lithography for 130nm technology node
3. Optical proximity correction for intermediate-pitch features using sub-resolution scattering bars
4. Mask specifications for 193nm lithography
5. Study of 193nm resist behavior under SEM inspection: How to reduce line-width shrinking effect
6. The mask error factor: Causes and implications for process latitude