Inspection of EUV reticles

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4688, Issue 1, 2002, Pages 363-374

  Pettibone, Donald ^a   Veldman, Andrei ^a   Liang, Ted ^b   Stivers, Alan R ^b   Mangat, Pawitter ^c   Lu, Bing ^c   Hector, Scott ^c   Wasson, James ^c   Blaedel, Kenneth ^d   Fisch, Emily ^e   Walker, David M ^e  

^a KLA TENCOR CORPORATION   (United States)

^b INTEL CORPORATION   (United States)

^c MOTOROLA INC   (United States)

^d LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^e IBM   (United States)

Author keywords

EUV; Inspection; NGL; Photomask; Reticle

Indexed keywords

ALGORITHMS; DEFECTS; LIGHT REFLECTION; MASKS; PHOTOLITHOGRAPHY;

PHOTOMASKS;

ULTRAVIOLET RADIATION;

EID: 18544379077     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.472311     Document Type: Article

References (13)

1. Donald W. Pettibone and Stan Stokowski, "Optical Inspection of EUV and SCALPEL, Reticles", SPIE Vol. 4409, pp. 710-717, (PMJ 2001).
2. Donald W. Pettibone et al, "UV Inspection of EUV and SCALPEL Reticles", SPIE Vol. 4186, pp. 241 - 249, (BACUS 2000).
3. Ted Liang et al, "Enhanced Optical Inspectability of Patterned EUVL Mask", BACUS 2001.
4. Kenneth Racette, Carey Williams, Emily Fisch, Louis Kindt, Mark Lawliss, Robin Ackel, Michael Lercel "Status of fabrication of square format masks for extreme ultraviolet lithography (EUVL) at the MCoC", SPIE 4688-16, this proceedings.
5. J. R. Wasson, K. Smith, P. J. S. Mangat and S. D. Hector, Emerging Lithographic Technologies III, SPIE Proceedings vol.4343, 402, 2001
6. P. J. S. Mangat, S. D. Hector, M. A. Thompson, W. J. Dauksher, J. Cobb, K. D. Cummings, D. P. Mancini, D. J. Resnick, G. Cardinale, C. Henderson, P. Kearney and M. Wedowski, Journal of Vacuum Science and Technology B17(6), 3029, 1999
7. Alan R. Stivers, Edita Tejnil, Pei-Yang Yan, Guojing Zhang, Ted Liang, Patrick Kofron, Jenn Chow and Jeff Powers, "Materials Selection for EUVL Masks, " Advance Reticle Symposium, San Jose, CA (March 1999).
8. SEMI P37-1101, SEMI Standard Specification for Extreme Ultraviolet Lithography Mask Substrates
9. "International Technology Roadmap for Semiconductors 2001 Edition, " Semiconductor Industry Assoc. with EECA, KSIA, JEITA, and TSIA, 2001. See http://public.itrs.net/Files/2001ITRS/Home.htm.
10. Dr. Stan Stokowski, private communication.
11. Stan Stokowski and Mehdi Vaez-Iravani, "Wafer Inspection Technology Challenges for ULSI Manufacturing", from AIP Conference Proceedings 449, Characterization and Metrology for ULSI Technology, 1998, pp 405-415.
12. P. B. Mirkarimi, E. A. Spiller, D. G. Stearns, S. L. Baker, V. R. Sperry, and E. M. Gullikson, "Advances in multilayer defect planarization in masks for extreme ultraviolet lithography, " these proceedings.
13. J. A. Folta, J. C. Davidson, M. Crosley, C. Larson, C. C. Walton, and P. A. Kearney, "Advances in low-defect multilayers for EUV mask blanks, " these proceedings.