Extension of the traditional optical model for investigation into the EUV projection lithography capabilities

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3331, Issue , 1998, Pages 646-654

  Ivin, Vladimir V ^a   Lucas, Kevin D ^a   Makhviladze, Tariel M ^a   Manuilov, Vadim V ^a   Medvedeva, Marina G ^a  

^a SOFT TEC   (Russian Federation)

Author keywords

Aberrations; EUV; Extreme ultraviolet; Modeling; Projection lithography; Reflective optics; Ring field system; Simulation; Two mirror system

Indexed keywords

ABERRATIONS; DIFFRACTION; IMPULSE RESPONSE; MIRRORS; PROJECTION SYSTEMS; ULTRAVIOLET RADIATION;

EXTREME ULTRAVIOLET PROJECTION LITHOGRAPHY;

PHOTOLITHOGRAPHY;

EID: 0032401451     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.309628     Document Type: Conference Paper

References (10)

1. Analysis of sub-0.15μm pattern replication in synchrotron radiation lithography
2. SCALPEL proof-of-concept system: Preliminary lithography results
3. Optical system for high-throughput EUV lithography
4. Large-area, high-resolution pattern replication by the use of two-aspherical-mirror system
5. Condenser optics, partial coherence, and imaging for soft-x-ray projection lithography
6. Tarnishing of Mo/Si multilayer x-ray mirrors
7. Modeling and simulation of the contemporary photolithography process
8. New concepts in projection mask aligners