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Volumn , Issue , 2002, Pages 22-27

Leakage current in low standby power and high performance devices: Trends and challenges

Author keywords

CMOS technology; Gate tunneling leakage; High performance; Leakage current; Low standby power; Off state sub threshold leakage; System on a ship (SoC)

Indexed keywords

CMOS INTEGRATED CIRCUITS; MOSFET DEVICES; SIGNAL PROCESSING; STANDBY POWER SYSTEMS;

EID: 0036375848     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (8)

References (15)
  • 11
    • 0035250093 scopus 로고    scopus 로고
    • Limit of gate oxide thickness scaling in MOSFETs due to apparent threshold voltage fluctuation induced by tunnel leakage current
    • Dec.
    • (2001) IEEE Trans. Electron Devices , vol.48 , Issue.12 , pp. 2823-2829
    • Koh, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.