A 100 nm copper/low-K bulk CMOS technology with multi Vt and multi gate oxide integrated transistors for low standby power, high performance and RF/analog system on chip applications

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue , 2002, Pages 16-17

  Yeap, Geoffrey C F ^a   Chen, J ^a   Grudowski, P ^a   Jeon, Y ^a   Shiho, Y ^a   Qi, W ^a   Jallepalli, S ^a   Ramani, N ^a   Hellig, K ^a   Vishnubhotla, L ^a   Luo, T ^a   Tseng, H ^a   Du, Y ^a   Lim, S ^a   Abramowitz, P ^a   Reddy, C ^a   Parihar, S ^a   Singh, R ^a   Wright, M ^a   Patterson, K ^a   Benavides, N ^a   Bonser, D ^a   Gompel, T V ^a   Conner, J ^a   Lee, J J ^a   Rendon, M ^a   Hall, D ^a   Nghiem, A ^a   Stout, R ^a   Weidemann, K ^a   Duvallet, A ^a   Alvis, J ^a   Dyer, D ^a   Burnett, D ^a   Ingersoll, P ^a   Wimmer, K ^a   Veeraraghavan, S ^a   Foisy, M ^a   Hall, M ^a   Pellerin, J ^a   Wristers, Dirk ^a   Woo, M ^a   Lage, C ^a   more..

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DIELECTRIC MATERIALS; ELECTRIC INDUCTORS; GATES (TRANSISTOR); MIM DEVICES; RESISTORS; STANDBY POWER SYSTEMS; STATIC RANDOM ACCESS STORAGE;

ANALOG TRANSISTORS;

CMOS INTEGRATED CIRCUITS;

EID: 0036045178     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)