SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium - Proceedings

Volumn 693, Issue , 2002, Pages 585-595

Theory of electron energy loss spectroscopy and its application to threading edge dislocations in GaN

(6) Fall, C J a Jones, R a Briddon, P R a Blumenau, A T a Frauenheim, T a Heggie, M I a

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CATHODOLUMINESCENCE; DISLOCATIONS (CRYSTALS); ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONIC STRUCTURE; ELECTROSTATICS; ENERGY GAP; POINT DEFECTS;

ACCEPTOR LEVELS; CORE LOSS SPECTROSCOPY; EDGE DISLOCATIONS; ELECTRICAL ACTIVITY; ELECTROSTATIC POTENTIAL; EXTENDED DEFECTS; GAP STATES;

GALLIUM NITRIDE;

EID: 0036375775 PISSN: 02729172 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (1)

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