Strained Ge channel p-type MOSFETs fabricated on Si1-xGex/Si virtual substrates

Materials Research Society Symposium - Proceedings

Volumn 686, Issue , 2002, Pages 39-43

  Lee, Minjoo L ^a   Leitz, Christopher W ^a   Cheng, Zhiyuan ^a   Pitera, Arthur J ^a   Taraschi, Gianni ^a   Antoniadis, Dimitri A ^a   Fitzgerald, Eugene A ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; HOLE MOBILITY; MOSFET DEVICES; OPTIMIZATION; SEMICONDUCTING SILICON; SILICA; STRAIN; SUBSTRATES;

VIRTUAL SUBSTRATES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0036343738     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (19)