Stacked Pt/SrBi2Ta2-xNbxO9/Pt/IrOx /Ir capacitor on poly plug

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 1, 2002, Pages 66-69

  Kweon, Soon Yong ^a,b   Choi, Si Kyung ^a   Yang, Woo Seok ^b   Yeom, Seung Jin ^b   Roh, Jae Sung ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

Capacitor size; Contact resistance of plug; Iridium thickness; Mega bit FeRAM; SBTN

Indexed keywords

CONDUCTIVE FILMS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRODES; ETCHING; FERROELECTRICITY; HYSTERESIS; POLARIZATION; POLYSILICON; RANDOM ACCESS STORAGE; THERMAL EFFECTS; THERMODYNAMIC STABILITY; TITANIUM NITRIDE;

FERROELECTRIC RANDOM ACCESS MEMORY (FERAM);

CAPACITORS;

EID: 0036313921     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.66     Document Type: Article

References (9)