Contactless characterization of thermally oxidized, air-exposed and hydrogen-terminated silicon surfaces by capacitance-voltage and photoluminescence methods

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 946-953

  Koyanagi, Satoshi ^a   Hashizme, Tamotsu ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

C V measurement; Contactless; Fermi level pinning; Hydrogen termination; Nondestructive; Photoluminescence; Surface state density distribution

Indexed keywords

CAPACITANCE; CHARACTERIZATION; ELECTRIC VARIABLES MEASUREMENT; ELECTRONIC PROPERTIES; FERMI LEVEL; INTERFACES (MATERIALS); NONDESTRUCTIVE EXAMINATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS; SURFACES;

CAPACITANCE VOLTAGE METHOD; CONTACTLESS CHARACTERIZATION; FERMI LEVEL PINNING; HYDROGEN TERMINATION; INTERFACE STATE DENSITY; METAL INSULATOR SEMICONDUCTOR; PHOTOLUMINESCENCE SURFACE STATE SPECTROSCOPY;

SILICON WAFERS;

EID: 0030080471     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.946     Document Type: Article

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