Ion beam modification of 6H/15R SiC crystals

Nuclear Inst. and Methods in Physics Research, B

Volumn 16, Issue 2-3, 1986, Pages 237-243

  Spitznagel, J A ^a   Wood, Susan ^a   Choyke, W J ^a   Doyle, N J ^a   Bradshaw, J ^b   Fishman, S G ^c  

^a WESTINGHOUSE ELECTRIC COMPANY   (United States)

^b UNIVERSITY OF PITTSBURGH   (United States)

^c OFFICE OF NAVAL RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS - RADIATION EFFECTS;

AMORPHIZATION; CHANNELING; RUTHERFORD BACKSCATTERING;

SILICON CARBIDE;

EID: 0022079565     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(86)90019-4     Document Type: Article

References (16)

1. Development of composite structural materials for high temperature applications
2. Failure mechanisms in ceramic-fiber/ceramic-matrix composites
3. Metallurgical characterization of the interfaces and the damping mechanisms in metal matrix composites
4. Mechanical response of single crystal Si to very high fluence H+ implantation
5. RBS/channeling analysis of hydrogen implanted single crystals of FZ silicon and 6H silicon carbide