MBE-growth of a Ge-CoSi2-Si heterostructure for vertical metal-semiconductor-metal photodetectors

Microelectronic Engineering

Volumn 60, Issue 1-2, 2002, Pages 191-196

  Winnerl, S ^a   Kappius, L ^a   Buca, D ^a   Lenk, St ^a   Buchal, Ch ^a   Mantl, S ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Infrared detector; Molecular beam allotaxy; Silicides; Surfactant mediated epitaxy

Indexed keywords

FABRICATION; INFRARED DETECTORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SURFACE ACTIVE AGENTS;

SILICIDES; SURFACTANT MEDIATED EPITAXY;

HETEROJUNCTIONS;

EID: 0036132759     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00594-9     Document Type: Conference Paper

References (15)

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