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Defect and Diffusion Forum

Volumn 200-202, Issue , 2002, Pages 153-159

X-ray topographic analysis of misfit dislocation distribution in InGaAs and GeSi/Si partially relaxed heterostructures

(1) Ferrari, C a

a CNR (Italy)

Author keywords

Misfit dislocation distribution; Threading dislocations; X ray topography

Indexed keywords

COMPOSITION; DISLOCATIONS (CRYSTALS); HETEROJUNCTIONS; MATHEMATICAL MODELS; SEMICONDUCTING GERMANIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

MISFIT DISLOCATION; X RAY DOUBLE CRYSTAL TOPOGRAPHY; X RAY TOPOGRAPHIC ANALYSIS;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0036132328 PISSN: 10120386 EISSN: 16629507 Source Type: Journal
DOI: 10.4028/www.scientific.net/ddf.200-202.153 Document Type: Article

Times cited : (1)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.