InAsyP1-y/InP quantum wells grown by solid source molecular beam epitaxy using As2 and As4

Journal of Crystal Growth

Volumn 234, Issue 2-3, 2002, Pages 364-368

  Hao, Zhi Biao ^a   Ren, Zai Yuan ^a   Xiong, Bing ^a   Guo, Wen Ping ^a   Luo, Yi ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

A1. Photoluminescence; A3. Molecular beam epitaxy; A3. Quantum wells; B1. Arsenates

Indexed keywords

ARSENIC COMPOUNDS; COMPUTER SIMULATION; DIMERS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

INCORPORATION EFFICIENCY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036131736     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01727-4     Document Type: Article

References (17)