Strain-compensated InAsP/GaInP multiple quantum wells for 1.3 μm waveguide modulators

Applied Physics Letters

Volumn 68, Issue 1, 1996, Pages 90-92

  Mei, X B ^a   Loi, K K ^a   Wieder, H H ^a   Chang, W S C ^a   Tu, C W ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; CALCULATIONS; ELECTRIC FIELD EFFECTS; EXCITONS; FERMI LEVEL; INTERFACES (MATERIALS); MODULATORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; WAVEGUIDES; X RAY CRYSTALLOGRAPHY;

DOUBLE CRYSTAL X RAY DIFFRACTION; ELECTROABSORPTION; GALLIUM INDIUM PHOSPHIDE; GAS SOURCE MOLECULAR BEAM EPITAXY; INDIUM ARSENIC PHOSPHIDE; QUANTUM CONFINED STARK EFFECT; WAVEGUIDE MODULATORS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0029731460     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116768     Document Type: Article

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