Effects of tensile strain and substrate off-orientation on the growth of GaInAs/InP multiple quantum well structures by CBE

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 1081-1086

  Marschner, T ^a   Rongen, R T H ^a   Leys, M R ^a   Tichelaar, F D ^b   Vonk, H ^a   Wolter, J H ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; HIGH TEMPERATURE EFFECTS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; STRAIN RATE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

AZIMUTHAL DEPENDENCE; GALLIUM INDIUM ARSENIDE; LATTICE TILTING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031144382     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00930-X     Document Type: Article

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