High-resolution damage depth profiles of unannealed sub-100 nm B+ implants in (100) silicon

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 1, 1998, Pages 316-319

  Hartford, C L ^a   Hillard, R J ^a   Mazur, R G ^a   Foad, M A ^b  

^a Solid State Measurements Inc   (United States)

^b Applied Materials   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000816723     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (18)

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