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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volumn 20, Issue 1, 2002, Pages 14-18
Characterization of annealing effects of low temperature chemical vapor deposition oxide films as application of 4H-SiC metal-oxide-semiconductor devices
(2)
Cho, Won Ju
a
Kim, Young Cheol
b
a
Electronics and Telecommunications Research Institute (ETRI)
(
South Korea
)
b
Korea University of Technology and Education
(
South Korea
)
Author keywords
[No Author keywords available]
Indexed keywords
ANNEALING; CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE; THERMAL CONDUCTIVITY;
HOT ELECTRONS; OXIDE FILMS;
MOS CAPACITORS;
EID
:
0036124833
PISSN
:
10711023
EISSN
:
None
Source Type
:
Journal
DOI
:
10.1116/1.1426365
Document Type
:
Conference Paper
Times cited : (
8
)
References (
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.
