An automated defect detection system for silicon carbide wafers

Conference Proceedings - IEEE SOUTHEASTCON

Volumn , Issue , 2002, Pages 42-47

  Kubota, Toshiro ^a   Talekar, Parag ^a   Sudarshan, Tangali S ^a   Ma, Xianyun ^a   Parker, Mat ^a   Ma, Yuefei ^a  

^a The Department of Mechanical Engineering   (United States)

Author keywords

Defects; Geodesic Active Contours; H K segmentation; Image Processing; Micro pipes; Silicon Carbide Wafers

Indexed keywords

BIREFRINGENCE; CHARGE COUPLED DEVICES; IMAGE PROCESSING; SILICON CARBIDE;

GEODESIC ACTIVE CONTOURS;

SILICON WAFERS;

EID: 0036083581     PISSN: 10910050     EISSN: 1558058X     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)

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4. Micropipes and polytypism as a source of lateral inhomogeneities in SiC substrates
5. The photoelastic constant and internal stress around micro-pipe defects of 6H-SiC single crystal
6. Origin of the internal stress around the micropipe of 6H-SiC single rystal
7. Physical vapor growth and chracterization of high conductivity 1.4 inch 4H-SiC bulk crystals
8. Structural, electrical and optical properties of bulk 4h and 6H p-type SIC
9. SiC-bulk growth by physical-vapor transport and its global modeling
10. Snakes: Active contour models