SCOPUS 정보 검색 플랫폼

Materials Science Forum

Volumn 338, Issue , 2000, Pages

Origin of the internal stress around the micropipe of 6H-SiC single crystal

(3) Kato, Tomohisa a,b Ohsato, Hitoshi a Okuda, Takashi a

a NAGOYA INSTITUTE OF TECHNOLOGY (Japan)

b ELECTROTECHNICAL LABORATORY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); LIGHT INTERFERENCE; PHOTOELASTICITY; POLYACRYLATES; RESIDUAL STRESSES; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS; STRAIN; STRESS ANALYSIS; STRESS RELAXATION;

MICROPIPE DEFECTS;

SILICON CARBIDE;

EID: 12944311041 PISSN: 02555476 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Article

Times cited : (3)

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