Statistical modeling of the program/erase cycling acceleration of low temperature data retention in floating gate nonvolatile memories

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2002, Pages 21-25

  Hoefler, Alexander ^a   Higman, J M ^a   Harp, T ^a   Kuhn, P J ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DATA ACQUISITION; ELECTRIC FIELDS; FLASH MEMORY; LEAKAGE CURRENTS; STATISTICAL METHODS; THRESHOLD VOLTAGE;

FLOATING GATE NONVOLATILE MEMORIES;

NONVOLATILE STORAGE;

EID: 0036081997     PISSN: 00999512     EISSN: None     Source Type: Journal    
DOI: 10.1109/RELPHY.2002.996605     Document Type: Article

References (12)

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4. A new data retention mechanism after endurance stress on Flash memory
5. Erratic charge loss bits in Flash memory array
6. The impact of SILC to data retention in sub-half-micron Embedded EEPROMs
7. Detailed observation of small leak current in Flash memories with thin tunnel oxides
8. Fast-bit-limited lifetime modeling of advance floating gate non-volatile memories
9. A reliability methodology for low temperature data retention in floating gate non-volatile memories
10. Field and cycling dependence of anomalous charge loss in Flash memory cells