Impact of SILC to data retention in sub-half-micron embedded EEPROMs

Microelectronic Engineering

Volumn 48, Issue 1, 1999, Pages 419-422

  Tao, G ^a   Cop R ^a   Dijkstra, J ^a   Kuper, F ^a   Verhaar, R ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; EXTRAPOLATION; LEAKAGE CURRENTS; PROM; RELIABILITY; SEMICONDUCTOR DEVICE MODELS;

ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM); STRESS INDUCED LEAKAGE CURRENT (SILC);

MICROELECTRONICS;

EID: 0033190180     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00417-7     Document Type: Article

References (8)

1. K. Naruke et al., IEDM Tech. Dig. 1998, pp 424.
2. C. de Graaf et al., Non-Volatile Semiconductor Memory Workshop 1998, pp. 101-104.
3. C. de Graaf et al., NVSMW 1998, pp 68-72
4. S. Kamohara et al., IRPS 1998, pp 57.
5. P. Hesto, in Instabilities in silicon devices G. Barbottin and A. Vapaille ed.
6. S. Satoh et al. IEEE trans. ED Vol 45, No 2, 1998, pp482-486
7. B. Euzent et al. IRPS 1981, pp 11-16
8. Unpublished data