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Volumn 88, Issue 1, 2000, Pages 503-507

Effect of heavy boron doping on the lattice strain around platelet oxide precipitates in Czochralski silicon wafers

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001188573     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373686     Document Type: Article
Times cited : (12)

References (20)
  • 12
  • 17
    • 0342481909 scopus 로고    scopus 로고
    • edited by W. Bullis, W. Lin, P. Wagner, T. Abe, and S. Kobayashi (The Electrochemical Society, Pennington, NJ)
    • K. Sueoka, M. Akatsuka, M. Yonemura, T. Ono, E. Asayama, and H. Katahama, in Defects in Silicon III, edited by W. Bullis, W. Lin, P. Wagner, T. Abe, and S. Kobayashi (The Electrochemical Society, Pennington, NJ, 1999), p. 253.
    • (1999) Defects in Silicon III , pp. 253
    • Sueoka, K.1    Akatsuka, M.2    Yonemura, M.3    Ono, T.4    Asayama, E.5    Katahama, H.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.