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Volumn 243, Issue 1, 2002, Pages 66-70

Photoluminescence and photoreflectance of Al0.24Ga0.76As/In0.15Ga0.85As/GaAs pseudomorphic high electron mobility transistor structures after rapid thermal annealing

(8) Lee, Dong Yul a Kim, Jong Su b Kim, D L a Kim, K H a Son, J S c Kim, I S c Han, B K d Bae, I H a

a Yeungnam University (South Korea)

b NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

c Kyungwoon University (South Korea)

d Kyungsan University (South Korea)

Author keywords

A1. Characterization; A3. Molecular beam epitaxy; B2. Semiconducting III IV materials; B3. High electron mobility transistors

Indexed keywords

ELECTRON MOBILITY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

PHOTOREFLECTANCE (PR) SPECTROSCOPY;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0036075311 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(02)01478-1 Document Type: Article

Times cited : (3)

References (19)

1
- 0029375309
- (1995) Solid State Electron. , vol.38 , pp. 1581
- Takamiya, S.¹ Yoshida, N.² Hayafuji, N.³ Sonoda, T.⁴ Mitsui, S.⁵

2
- 0027644158
- (1993) Thin Solid Films , vol.231 , pp. 95
- Ballingall, J.M.¹ Martin, P.A.² Mazurowski, J.³ Ho, P.⁴ Chao, P.C.⁵ Smith, P.M.⁶ Duh, K.H.G.⁷

3
- 0001269848
- (1994) J. Appl. Phys. , vol.76 , Issue.11 , pp. 7535
- Yu, P.W.¹ Jogai, B.² Rogers, T.J.³ Martin, P.A.⁴ Ballingall, J.M.⁵

4
- 0034547957
- (2000) Physica E , vol.8 , pp. 297
- Chen, T.H.¹ Huang, Y.S.² Shou, T.S.³ Tiong, K.K.⁴ Lin, D.Y.⁵ Pollak, F.H.⁶ Goorsky, M.S.⁷ Streit, D.C.⁸ Wojtowicz, M.⁹

5
- 0005793872
- (1989) J. Vac. Sci. Technol. B , vol.7 , Issue.2 , pp. 380
- Dodabalapur, A.¹ Kesan, V.P.² Block, T.R.³ Neikirk, D.P.⁴ Streetman, B.G.⁵

6
- 0000292224
- (1991) Appl. Phys. Lett. , vol.58 , Issue.20 , pp. 2273
- Streit, D.C.¹ Jones, W.L.² Sadwick, L.P.³ Kim, C.W.⁴ Hwu, R.J.⁵

7
- 0029252574
- (1995) Solid State Commun. , vol.93 , Issue.7 , pp. 629
- Oh, Y.T.¹ Kim, S.K.² Kang, T.W.³ Hong, C.Y.⁴ Lee, J.J.⁵ Lee, H.K.⁶ Kim, T.W.⁷

8
- 0034272792
- (2000) J. Crystal Growth , vol.218 , pp. 13
- Lu, L.¹ Zhang, Y.² Xu, Z.³ Xu, Z.⁴ Wang, Z.⁵ Wang, J.⁶ Ge, W.⁷

9
- 36449000540
- (1994) J. Appl. Phys. , vol.76 , Issue.10 , pp. 5931
- Gilpérez, J.M.¹ Sanchez-Rojas, J.L.² Munoz, E.³ Calleja, E.⁴ David, J.P.R.⁵ Reddy, M.⁶ Hill, G.⁷ Sanchez-Dehesa, J.⁸

10
- 0035398202
- (2001) J. Crystal Growth , vol.227-228 , pp. 218
- Zhou, G.L.¹ Liu, W.² Lin, M.E.³

11
- 0029309112
- (1995) J. Crystal Growth , vol.150 , pp. 1236
- Kudo, M.¹ Mishima, T.² Washima, M.³

12
- 0033079332
- (1999) J. Crystal Growth , vol.197 , pp. 84
- Leem, J.Y.¹ Lee, C.R.² Noh, S.K.³ Son, J.S.⁴

13
- 0000396156
- (1997) Appl. Phys. Lett. , vol.71 , Issue.22 , pp. 3257
- Leem, J.Y.¹ Son, J.S.² Lee, C.R.³ Kim, C.S.⁴ Lee Hwack, J.⁵ Noh, S.K.⁶ Bae, I.H.⁷

14
- 0027652476
- (1993) J. Appl. Phys. , vol.74 , Issue.4 , pp. 2760
- Brierley, S.K.¹

15
- 18244421266
- (1997) J. Crystal Growth , vol.175-176 , pp. 930
- Wojtowicz, M.¹ Pascua, D.² Han, A.-C.³ Block, T.R.⁴ Streit, D.C.⁵

16
- 0005864997
- (1986) Appl. Phys. Lett. , vol.49 , Issue.15 , pp. 966
- Seo, K.S.¹ Bhattacharya, P.K.² Kothiyal, G.P.³ Hong, S.⁴

17
- 0000277235
- (1988) Appl. Phys. Lett. , vol.53 , Issue.22 , pp. 2185
- Chi, J.Y.¹ Koteles, E.S.² Holmstrom, R.P.³

18
- 18144441341
- (2001) J. Crystal Growth , vol.227-228 , pp. 425
- Cervantes-Contreras, M.¹ Lopez-Lopez, M.² Melendez-Lira, M.³ Tamura, M.⁴ Hiroyama, Y.⁵

19
- 0003072178
- (1995) J. Appl. Phys. , vol.7 , Issue.79 , pp. 4564
- Liu, W.¹ Jiang, D.² Zhang, Y.³ Jin, S.⁴ Wang, R.⁵

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