Room temperature polarized photoreflectance and photoluminescence characterization of AlGaAs/InGaAs/GaAs high electron mobility transistor structures

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 8, Issue 4, 2000, Pages 297-305

  Chen, T H ^a   Huang, Y S ^a   Shou, T S ^b   Tiong, K K ^b   Lin, D Y ^c   Pollak, F H ^d   Goorsky, M S ^e   Streit, D C ^f   Wojtowicz, M ^f  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^c NAN KAI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^d CITY UNIVERSITY OF NEW YORK   (United States)

^e UNIVERSITY OF CALIFORNIA   (United States)

^f NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CARRIER MOBILITY; DISLOCATIONS (CRYSTALS); ELECTRON GAS; LIGHT POLARIZATION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PHOTOREFRACTIVE MATERIALS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STRAIN;

POLARIZED PHOTOREFLECTANCE; THREADING DISLOCATION DENSITIES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0034547957     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(00)00165-X     Document Type: Article

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