Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes

Journal of Crystal Growth

Volumn 218, Issue 1, 2000, Pages 13-18

  Lu, Liwu ^a   Zhang, Yanhua ^a   Xu, Zuntu ^a   Xu, Zhongying ^a   Wang, Zhanguo ^a   Wang, J ^b   Ge, Weikun ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC CURRENTS; ELECTRON EMISSION; GRADIENT INDEX OPTICS; HETEROJUNCTIONS; INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

GRADED INDEX SEPARATE CONFINEMENT HETEROSTRUCTURES;

QUANTUM WELL LASERS;

EID: 0034272792     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00517-0     Document Type: Article

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