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Volumn 227, Issue 228, 2001, Pages 218-222
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Charge density control of single and double δ-doped PHEMT grown by molecular beam epitaxy
a
a
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Author keywords
A3. Molecular beam epitaxy; B2. Semiconducting gallium arsenide; B3. High electron mobility transistors
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Indexed keywords
ELECTRIC CHARGE;
HALL EFFECT;
LIGHT REFLECTION;
MOLECULAR BEAM EPITAXY;
PHOTOLUMINESCENCE;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR GROWTH;
CONTACTLESS ELECTRICAL REFLECTANCE;
PHOTOREFLECTANCE;
PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS (PHEMT);
HIGH ELECTRON MOBILITY TRANSISTORS;
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EID: 0035398202
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)00667-4 Document Type: Article |
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Times cited : (6)
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References (3)
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