Gallium interstitials in GaAs/AlGaAs heterosructures investigated by optically and electrically detected magnetic resonance

Materials Science Forum

Volumn 258-263, Issue 9993, 1997, Pages 1309-1314

  Wimbauer, T ^a   Brandt, M S ^a   Bayerl, M W ^a   Stutzmann, M ^a   Hofmann, D M ^b   Mochizuki, Y ^c   Mizuta, M ^c  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b JUSTUS LIEBIG UNIVERSITY   (Germany)

^c NEC CORPORATION   (Japan)

Author keywords

GaAs; Optically and electrically detected magnetic resonance

Indexed keywords

ARSENIC; CHROMIUM; CRYSTAL DEFECTS; MAGNETIC RESONANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

CHARGE RECOMBINATION; ELECTRICALLY DETECTED MAGNETIC RESONANCE (EDMR); OPTICALLY DETECTED MAGNETIC RESONANCE (ODMR);

HETEROJUNCTIONS;

EID: 0031374074     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

References (4)

1. Y. Mochizuki, M. Mizuta and A. Mochizuki, Mat. Sci. For. 196-201, 1927 (1995).
2. T.Wimbauer, D. M. Hofmann, B. K. Meyer, M. S. Brandt, T. Brandl, M. W. Bayerl, N. M . Reinacher, M. Stutzmann, Y. Mochizuki and M. Mizuta, Mat. Res. Soc. Symp. Proc. 442, 511 (1997).
3. T. A. Kennedy, R. Magno and M. G. Spencer, Phys. Rev. B 37, 6325 (1988).
4. J. M. Trombetta, T. A. Kennedy, W. Tseng and D. Gammon, Phys. Rev. B 43, 2458 (1991).