Self-assembled quantum-dash lasers on the InP system

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2002, Pages 717-720

  Schwertberger, R ^a   Gold, D ^a   Reithmaier, J P ^a   Forchel, A ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SELF ASSEMBLY; SEMICONDUCTING INDIUM PHOSPHIDE;

QUANTUM-DASH LASERS;

QUANTUM WELL LASERS;

EID: 0036051301     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. Performance and physics of quantum-dot lasers with self-assembled columnar-shaped and 1.3-μm emitting InGaAs quantum dots
2. Low-threshold current density 1.3 μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure
3. Highly efficient GaInAs/(Al)GaAs quantum-dot lasers based on a single active layer venus 980 nm high-power quantum-well lasers
4. High temperature operating 1.3 μm quantum-dot lasers for telecommunication applications
5. 0.85As quantum well
6. Low-threshold continuous-wave two-stack quantum-dot laser with reduced temperature sensitivity
7. InAs/GaInAs quantum dot DFB lasers emitting at 1.3 μm
8. Low-threshold quantum dot lasers with 201 nm tuning range
9. Low chirp observed in directly modulated quantum dot lasers
10. Room-temperature operation of inas quantum-dash lasers on InP (001)
11. Correlation between the gain profile and the temperature-induced wavelength-shift of quantum dot lasers