An HSPICE HBT model for InP-based single HBT's

IEEE Transactions on Electron Devices

Volumn 43, Issue 9, 1996, Pages 1470-1472

  Yang, K ^a   Gutierrez Aitken, A L ^a   Zhang, X ^a   Bhattacharya, P ^a   Haddad, G I ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; NUMERICAL METHODS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS; TRANSIT TIME DEVICES;

COLLECTOR TRANSIT TIME DELAY EFFECTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030241664     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.535336     Document Type: Article

References (6)

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2. A. L. Gutierrez-Ailken, K. Yang, X. Zhang, G. I. Haddad, and P. Bhattacharya, "16-GHz bandwidth InAlAs-InGaAs monolithically integrated p-i-n/HBT photoreceiver," IEEE Photon. Technol. Lett., vol. 7, pp. 1339-1341, 1995.
3. P. C. Grossman, J. Chôma, Jr., "Large signal modeling of HBT'a including self-healing and transit time effects," IEEE Trans. Microwave Theory Tech., vol. 40, pp. 449-4164, 1992.
4. K. Yang, J. C. Cowles. J. R. East, and G. I. Haddad, "Theoretical and Experimental DC characterization of InGaAs-based abrupl emittei HBT's," IEEE Trans. Electron Devices, vol. 42, pp. 1047-1058, 1995.
5. D. A. Teeter, J. R. East, R. K. Mains, and G. 1. Haddad. "Large-signal numerical and analytical HBT models," IEEE Trans. Electron Devices, vol. 40, pp. 837-845, 1993.
6. I. Getreu, Modeling ihn bipolar transistor, Tektronix Inc., 1976.