The impact of isofocal bias on MEEF management

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4690 II, Issue , 2002, Pages 997-1004

  Parker, Colin ^a   Reilly, Michael ^a  

^a SHIPLEY COMPANY   (United States)

Author keywords

Isofocal bias; Mask bias; Mask error factor; MEEF; MEEF management; Proximity bias

Indexed keywords

COMPUTER SIMULATION; ERROR ANALYSIS; LIGHTING; PHOTORESISTS;

ISOFOCAL BIAS; MASK ERROR ENHANCEMENT FACTOR (MEEF);

MASKS;

EID: 0036030882     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.474175     Document Type: Conference Paper

References (7)

1. M. Reilly, et. al., "MEEF Management and the Effect of Assist Feature Optical Proximity Corrections", Lithography for Semiconductor Manufacturing, Proc. SPIE, 2001, vol. 4404, pp. 180-187.
2. W. Maurer, et. al., "Pattern Transfer at k1=0.5: Get 0.25 mm Lithography Ready for Manufacturing", Proc. SPIE, 1996, vol. 2726, pp.113-124.
3. S. Robertson, et. al., "A Novel Analysis Technique for Examining the Effect of Exposure Conditions on the Mask Error Enhancement Factor", Proc. SPIE, 2001, vol. 4404, pp. 153-161.
4. D. Shurz, et. al., "The Effects of Mask Error Factor on Process Window Capability", 19th Annual Bacus Symposium, Proc. SPIE, 1999, vol. 3873, pp. 215-225.
5. M. Reilly, et. al., "Comparison of OPC Rules and Common Process Windows for 130nm Features Using Binary and Attenuated Phase Shift Masks", Proc. SPIE, 2000, vol. 4000, pp. 1209-1222.
6. PROLITH and ProDATA are trademarks of KLA-Tencor Corporation.
7. M. Reilly, et. al., "Maximizing Common Process Latitude by Integrated Process Development for 130nm Lithography", Proc. SPIE, 2002, vol. 4691.