Method to improve the throughput and retain the cd performance for duv process

Proceedings of SPIE-The International Society for Optical Engineering

Volumn 4690 II, Issue , 2002, Pages 712-721

  Hsiao, Yung Tsung ^a   Liu, Ta Chung ^a   Chiu, Lee Jean ^b   Chen, Chih You ^b   Ku, Chin Yu ^b  

^a NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^b VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION   (Taiwan)

Author keywords

Cd; Duv; Post exposure bake (peb); Post exposure delay (ped)

Indexed keywords

ACTIVATION ENERGY; DIFFUSION; HARDWARE; LITHOGRAPHY;

CRITICAL DIMENSIONS (CD); POST EXPOSURE DELAY (PED);

PHOTORESISTS;

EID: 0036029764     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.474271     Document Type: Article

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