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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 3, 2002, Pages 1278-1281

Molecular-beam epitaxy growth and properties of BexZn1-xTe alloys for optoelectronic devices

(5) Maksimov, O a Muñoz, Martin a Tamargo, M C a Lau, J b Neumark, G F b

a CITY COLLEGE OF NEW YORK (United States)

b Och Spine at New York Presbyterian Hospitals (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPOSITION; CRYSTAL DEFECTS; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; OPTOELECTRONIC DEVICES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM PHOSPHIDE; STRAIN; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

COMPRESSIVE STRAIN;

BERYLLIUM ALLOYS;

EID: 0035998597 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1470515 Document Type: Conference Paper

Times cited : (1)

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