Growth and characterization of nitrogen-doped MgSe/ZnSeTe superlattice quasi-quaternary on InP substrates and fabrication of light emitting diodes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 B, 1999, Pages 2598-2602

  Shinozaki, Wataru ^a   Nomura, Ichirou ^a   Shimbo, Hiroyuki ^a   Hattori, Hiroshi ^a   Sano, Takashi ^a   Che, Song Bek ^a   Kikuchi, Akihiko ^a   Shimomura, Kazuhiko ^a   Kishino, Katsumi ^a  

^a SOPHIA UNIVERSITY   (Japan)

Author keywords

InP substrate; LED; MBE; MgSe; Quasi quaternary; RF radical; Superlattice; ZnSeTe

Indexed keywords

EID: 0000925651     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2598     Document Type: Article

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