Molecular beam epitaxy of Be-related II-VI compounds

Materials Science and Engineering B

Volumn 43, Issue 1-3, 1997, Pages 83-87

  Litz, T ^a   Lugauer, H J ^a   Fischer, F ^a   Zehnder, U ^a   Lunz, U ^a   Gerhard, T ^a   Ress, H ^a   Waag, A ^a   Landwehr, G ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

Be related II VI compounds; Laser diodes; Molecular beam epitaxy

Indexed keywords

MOLECULAR BEAM EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES;

EPITAXIAL LAYERS;

BERYLLIUM COMPOUNDS;

EID: 0009737440     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01837-5     Document Type: Article

References (4)

1. C. Vèrié, Int. Conf. Semiconductor Heteroepitaxy, Montpellier, France, July 4-7, 1995.
2. H.-J. Lugauer, F. Fischer, T. Litz, A. Waag, U. Zehnder, W. Ossau, T. Gerhard, G. Landwehr, C. Becker, R. Kruse and J. Geurts, E-MRS Conf., Strasbourg, France, 1996.
3. A. Waag, F. Fischer, H.-F. Lugauer, T. Litz, U. Zehnder, T. Gerhard, M. Möller and G. Landwehr, J. Appl. Phys. (submitted).
4. F. Fischer, J. Laubender, H.-J. Lugauer, T. Litz, A. Weingärtner, K. Schüll, U. Zehnder, A. Waag and G. Landwehr, E-MRS Conf., Strasbourg, France, 1996.