Characteristics of BeTe films grown by molecular beam epitaxy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 2, 2000, Pages 457-460

  Cho, M W ^a   Chang, J H ^a   Saeki, S ^a   Wang, S Q ^a   Yao, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BERYLLIUM COMPOUNDS; COMPOSITION; CRYSTALLIZATION; DOPING (ADDITIVES); FILM GROWTH; MORPHOLOGY; PHASE DIAGRAMS; PHASE TRANSITIONS; SEMICONDUCTING GALLIUM ARSENIDE; SURFACES; VAPOR PRESSURE;

BEAM EQUILIBRIUM PRESSURE; BERYLLIUM TELLURIDE; STRUCTURAL PROPERTIES;

MOLECULAR BEAM EPITAXY;

EID: 0034156442     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582208     Document Type: Article

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