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Journal of Crystal Growth

Volumn 214, Issue , 2000, Pages 487-491

MBE grown BeTe and ZnBeTe films as a new p-contact layer of ZnSe-based II-VI lasers

(6) Cho, M W a Hong, S K a Chang, J H a Saeki, S a Nakajima, M a Yao, T a

a TOHOKU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BERYLLIUM ALLOYS; COMPOSITION; DIFFUSION IN SOLIDS; HALL EFFECT; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; OXIDATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR LASERS; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

CELL TEMPERATURE; CONTACT LAYER; HOLE CONCENTRATION; ZINC SELENIUM ALLOYS;

SEMICONDUCTOR GROWTH;

EID: 0033705758 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(00)00136-6 Document Type: Article

Times cited : (17)

References (11)

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